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Diskmark for ram12/17/2023 They will throttle ~70C which is most commonly invoked with sustained, sequential writes but can also derive from heavy, mixed workloads. Actually Samsung lists two temperatures, one of which is for NAND, and yes – NAND programs better with heat. (clocks can vary, the older designs were typically 400 MHz but tend to be 500-700 MHz now as in the SM2262/EN and Phison E12 at 575-650 and 667 MHz respectively the SX8100 compared is a dual-core design)Ġ-70C is a typical operating range but this is the composite temperature, ARM controllers can get far hotter internally (125C). The previous drive generation (960 EVO) used the similar but lower-clocked Polaris. Samsung built this off the R4-based UAX/UBX which was a tri-core design with cores for read, write, and host (user) the penta-core, R5 iteration is in a 2/2/1 configuration instead. The R5 is the successor to the R4 and is intended for specialized use, that is it a microcontroller (RISC by the old definition) optimized for low-latency, real-time operations as you see with storage (it’s also used on HDDs). Controller is the same, both have DRAM, similar firmware, same SLC cache design (static + dynamic).Īs the review mentions this uses the Phoenix controller – this is a penta-core ARM Cortex-R5 design. The 970 EVO Plus thus has higher IOPS and sequential write performance in both SLC and TLC modes. read (3400 MB/s) even at 250GB (8 dies x 2 planes = 16-way interleaving). TLC read times of ~75µs ensure maximum seq. In any case, the program time of these two is about the same (500µs for 2-bit MLC, 200µs+ for TLC in SLC mode, 800-1100µs for TLC) so the speed difference implies Samsung went from two-plane to four-plane flash which has diminishing returns (~50% gains) and higher TLC program latency. You can’t go by set layers as there will be dummy layers to reduce wordline program disturb etc. In RND4K Q1T1 data the Samsung 970 EVO 1TB also provides higher write performance by 22%.įor those wondering at the difference between this and the 970 EVO Plus: 64L vs. It literally has double the write performance which is a really big deal. In RND4K Q32T16 the Samsung SSD 970 EVO 1TB destroys the XPG SX8100NP in read and write performance. Now we come to the random data performance. However, the tables really turn on the write speed with the Samsung 970 Evo 1TB providing 26% more write performance, which is quite a difference. We aren’t sure why, but we double-checked the result and it was true. This time the XPG SSD takes the lead by a large margin, 14%. On SEQ1M Q1T1 data there’s a huge difference in the read performance. This is a great start for sequential data. On Write the Samsung 970 EVO 1TB SSD is 10% faster on write speeds and reaches its rated 2500MB/s write speed. The Samsung 970 EVO 1TB SSD is about 3% faster on read performance and achieves over the 3400MB/s rated speed up to 3570MB/s which is excellent. In this first graph, we are comparing the Samsung 970 EVO 1TB SSD to the XPG SX8100NP 2TB SSD in CrystalDiskMark SEQ1M Q8T1 Read and Write. As you read through the data remember the specific specifications for the model MZ-V7E1T0BW Samsung SSD 970 EVO 1TB drive we have are rated at 3400MB/s Sequential Read and 2500MB/s Sequential Write.
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